onsemi MMBT4125LT1

onsemi · Transistors (BJTs) · MPN MMBT4125LT1

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO4V
Pd - Power Dissipation350mW
typePNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

30V PNP 200mA Single Bipolar Transistors RoHS

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