onsemi MMBT2222LT1G

onsemi · Transistors (BJTs) · MPN MMBT2222LT1G

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Specifications

Current - Collector Cutoff10nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain35
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 30V 600mA 250MHz 300mW Surface Mount SOT-23

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