onsemi MMBT200

onsemi · Transistors (BJTs) · MPN MMBT200

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
DC Current Gain450
Pd - Power Dissipation350mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor PNP 45V 500mA 250MHz 350mW Surface Mount SOT-23

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