onsemi · FETs & Power MOSFETs · MPN MMBFJ211
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| FET Type | N-Channel |
|---|---|
| Configuration | - |
| RDS(on) | - |
| Operating Temperature | -55℃~+150℃ |
| Drain Current (Idss) | 20mA |
| Pd - Power Dissipation | 225mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-channel |
| Gate-Source Breakdown Voltage (Vgss) | - |
| Gate-Source Cutoff Voltage (VGS(off)) | - |
| Input Capacitance(Ciss) | - |
| Output Capacitance(Coss) | - |
20mA 225mW 1 N-channel SOT-23-3 RF FETs, MOSFETs RoHS