onsemi MMBF170

onsemi · FETs & Power MOSFETs · MPN MMBF170

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)40pF

Technical details

N-Channel 60V 500mA 300mW Surface Mount SOT-23

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