onsemi MJW3281AG

onsemi · Transistors (BJTs) · MPN MJW3281AG

No reviews yet — be the first to review onsemi MJW3281AG.

Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO230V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation200W
Number1 NPN
typeNPN
Current - Collector(Ic)15A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 230V 15A 30MHz 200W Through Hole TO-247

Related Transistors (BJTs)