onsemi · Transistors (BJTs) · MPN MJH11020G
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| Vbe Saturation(VBE(sat)) | 3.8V |
|---|---|
| Vbe On(VBE(on)) | 2.8V |
| Collector - Emitter Voltage VCEO | 200V |
| DC Current Gain | 400 |
| Pd - Power Dissipation | 150W |
| type | NPN |
| Current - Collector(Ic) | 15A |
| Operating Temperature | -65℃~+150℃ |
200V 400 NPN 15A TO-247 Single Bipolar Transistors RoHS