onsemi MJH11020G

onsemi · Transistors (BJTs) · MPN MJH11020G

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Specifications

Vbe Saturation(VBE(sat))3.8V
Vbe On(VBE(on))2.8V
Collector - Emitter Voltage VCEO200V
DC Current Gain400
Pd - Power Dissipation150W
typeNPN
Current - Collector(Ic)15A
Operating Temperature-65℃~+150℃

Technical details

200V 400 NPN 15A TO-247 Single Bipolar Transistors RoHS

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