onsemi MJF45H11G

onsemi · Transistors (BJTs) · MPN MJF45H11G

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)40MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain40
Pd - Power Dissipation36W
Number1 PNP
typePNP
Current - Collector(Ic)10A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor PNP 80V 10A 40MHz 36W Through Hole TO-220FP-3

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