onsemi MJE5851G

onsemi · Transistors (BJTs) · MPN MJE5851G

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO350V
DC Current Gain-
Pd - Power Dissipation80W
typePNP
Current - Collector(Ic)8A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))5V

Technical details

350V PNP 8A TO-220 Single Bipolar Transistors RoHS

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