onsemi MJE18206

onsemi · Transistors (BJTs) · MPN MJE18206

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Specifications

Current - Collector Cutoff200uA
Transition frequency(fT)13MHz
Collector - Emitter Voltage VCEO600V
Emitter-Base Voltage VEBO10V
Pd - Power Dissipation100W
typeNPN
Current - Collector(Ic)8A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))750mV

Technical details

600V NPN 8A Single Bipolar Transistors

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