onsemi MJE181G

onsemi · Transistors (BJTs) · MPN MJE181G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain50
Pd - Power Dissipation1.5W
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))1.7V
Operating Temperature-65℃~+150℃

Technical details

60V 50 NPN 3A TO-225-3 Single Bipolar Transistors RoHS

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