onsemi MJE18008G

onsemi · Transistors (BJTs) · MPN MJE18008G

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)13MHz
Collector - Emitter Voltage VCEO450V
DC Current Gain14
Pd - Power Dissipation125W
typeNPN
Current - Collector(Ic)8A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

450V 14 NPN 8A ITO-220AB-3 Single Bipolar Transistors RoHS

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