onsemi MJE18004G

onsemi · Transistors (BJTs) · MPN MJE18004G

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)13MHz
Collector - Emitter Voltage VCEO450V
Emitter-Base Voltage VEBO9V
DC Current Gain14
Pd - Power Dissipation75W
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 450V 5A 13MHz 75W Through Hole TO-220AB-3

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