onsemi MJE15029G

onsemi · Transistors (BJTs) · MPN MJE15029G

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO120V
DC Current Gain40
Pd - Power Dissipation50W
typePNP
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))500mV
Operating Temperature-65℃~+150℃

Technical details

120V 40 PNP 8A TO-220 Single Bipolar Transistors RoHS

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