onsemi · Transistors (BJTs) · MPN MJD5731T4G
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| Current - Collector Cutoff | 100uA |
|---|---|
| Transition frequency(fT) | 10MHz |
| Collector - Emitter Voltage VCEO | 350V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 30 |
| Pd - Power Dissipation | 15W |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 1A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1V |
350V 30 1 PNP PNP 1A TO-252-2(DPAK) Single Bipolar Transistors RoHS