onsemi MJD50RLG

onsemi · Transistors (BJTs) · MPN MJD50RLG

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO400V
DC Current Gain30
Pd - Power Dissipation15W
typeNPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

400V 30 NPN 1A DPAK Single Bipolar Transistors RoHS

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