onsemi MJD42CRLG

onsemi · Transistors (BJTs) · MPN MJD42CRLG

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain15
Pd - Power Dissipation1.75W
Number1 PNP
typePNP
Current - Collector(Ic)6A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1.5V

Technical details

Bipolar (BJT) Transistor PNP 100V 6A 3MHz 1.75W Surface Mount DPAK

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