onsemi · Transistors (BJTs) · MPN MJD41CT4G
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| Current - Collector Cutoff | 50uA |
|---|---|
| Transition frequency(fT) | 3MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 30 |
| Pd - Power Dissipation | 20W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 6A |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.5V |
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 20W Surface Mount TO-252(DPAK)