onsemi · Transistors (BJTs) · MPN MJD350TF
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| Current - Collector Cutoff | 100uA |
|---|---|
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 300V |
| Emitter-Base Voltage VEBO | 3V |
| DC Current Gain | 30 |
| Pd - Power Dissipation | 15W |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 500mA |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | - |
300V 30 1 PNP PNP 500mA TO-252-2(DPAK) Single Bipolar Transistors RoHS