onsemi MJD350TF

onsemi · Transistors (BJTs) · MPN MJD350TF

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO3V
DC Current Gain30
Pd - Power Dissipation15W
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

300V 30 1 PNP PNP 500mA TO-252-2(DPAK) Single Bipolar Transistors RoHS

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