onsemi MJD31CEITU

onsemi · Transistors (BJTs) · MPN MJD31CEITU

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain60
Pd - Power Dissipation1.56W
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))1.2V
Operating Temperature-

Technical details

100V 60 NPN 3A TO-252-3(DPAK) Single Bipolar Transistors RoHS

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