onsemi MJD31C1G

onsemi · Transistors (BJTs) · MPN MJD31C1G

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
DC Current Gain-
Pd - Power Dissipation15W
typeNPN
Current - Collector(Ic)3A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1.2V

Technical details

100V NPN 3A IPAK Single Bipolar Transistors RoHS

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