onsemi MJD2955G

onsemi · Transistors (BJTs) · MPN MJD2955G

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Specifications

Current - Collector Cutoff2uA
Transition frequency(fT)2MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain20
Pd - Power Dissipation20W
Number1 PNP
typePNP
Current - Collector(Ic)10A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1.1V

Technical details

Bipolar (BJT) Transistor PNP 60V 10A 2MHz 20W Surface Mount DPAK

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