onsemi · Transistors (BJTs) · MPN MJD243G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 40MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 7V |
| DC Current Gain | 180 |
| Pd - Power Dissipation | 12.5W |
| type | NPN |
| Current - Collector(Ic) | 4A |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 300mV |
Bipolar (BJT) Transistor NPN 100V 4A 40MHz 12.5W Surface Mount DPAK-3