onsemi MJD128T4G

onsemi · Transistors (BJTs) · MPN MJD128T4G

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO120V
DC Current Gain1000@4V,4A
Pd - Power Dissipation1.75W
typePNP
Current - Collector(Ic)8A
Operating Temperature-65℃~+150℃@(Tj)
Vce Saturation(VCE(sat))4V@8A,80mA

Technical details

120V 1000@4V,4A PNP 8A DPAK Single Bipolar Transistors RoHS

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