onsemi MJD127G

onsemi · Transistors (BJTs) · MPN MJD127G

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain1000
Pd - Power Dissipation1.75W
typePNP
Current - Collector(Ic)8A
Operating Temperature-65℃~+150℃@(Tj)
Vce Saturation(VCE(sat))4V

Technical details

100V 1000 PNP 8A TO-252(DPAK) Single Bipolar Transistors RoHS

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