onsemi MJD117G

onsemi · Transistors (BJTs) · MPN MJD117G

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Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)25MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain1000
Pd - Power Dissipation1.75W
typePNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))3V
Operating Temperature-65℃~+150℃@(Tj)

Technical details

100V 1000 PNP 2A DPAK Single Bipolar Transistors RoHS

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