onsemi · Transistors (BJTs) · MPN MJD112G
No reviews yet — be the first to review onsemi MJD112G.
| Current - Collector Cutoff | 20uA |
|---|---|
| Transition frequency(fT) | 25MHz |
| Collector - Emitter Voltage VCEO | 100V |
| DC Current Gain | 1000 |
| Pd - Power Dissipation | 1.75W |
| type | NPN |
| Current - Collector(Ic) | 2A |
| Vce Saturation(VCE(sat)) | 3V |
| Operating Temperature | -65℃~+150℃@(Tj) |
100V 1000 NPN 2A DPAK Single Bipolar Transistors RoHS