onsemi · Transistors (BJTs) · MPN MJ802G
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| Current - Collector Cutoff | 5mA |
|---|---|
| Transition frequency(fT) | 2MHz |
| Collector - Emitter Voltage VCEO | 90V |
| Emitter-Base Voltage VEBO | 4V |
| DC Current Gain | 100 |
| Pd - Power Dissipation | 200W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 30A |
| Operating Temperature | -65℃~+200℃ |
| Vce Saturation(VCE(sat)) | 800mV |
Bipolar (BJT) Transistor NPN 90V 30A 2MHz 200W Through Hole TO-204