onsemi MJ2955G

onsemi · Transistors (BJTs) · MPN MJ2955G

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Specifications

Current - Collector Cutoff700uA
Transition frequency(fT)2.5MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain20
Pd - Power Dissipation115W
Number1 PNP
typePNP
Current - Collector(Ic)15A
Operating Temperature-65℃~+200℃
Vce Saturation(VCE(sat))1.1V

Technical details

Bipolar (BJT) Transistor PNP 60V 15A 2.5MHz 115W Through Hole TO-204

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