onsemi · Transistors (BJTs) · MPN MJ21196G
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| Current - Collector Cutoff | 100uA |
|---|---|
| Transition frequency(fT) | 4MHz |
| Collector - Emitter Voltage VCEO | 250V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 25 |
| Pd - Power Dissipation | 250W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 16A |
| Operating Temperature | -65℃~+200℃ |
| Vce Saturation(VCE(sat)) | 4V |
250V 25 1 NPN NPN 16A TO-204 Single Bipolar Transistors RoHS