onsemi MJ15015G

onsemi · Transistors (BJTs) · MPN MJ15015G

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)6MHz
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO7V
DC Current Gain10
Pd - Power Dissipation180W
Number1 NPN
typeNPN
Current - Collector(Ic)15A
Operating Temperature-65℃~+200℃
Vce Saturation(VCE(sat))5V

Technical details

Bipolar (BJT) Transistor NPN 120V 15A 6MHz 180W Through Hole TO-3

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