onsemi MJ15004G

onsemi · Transistors (BJTs) · MPN MJ15004G

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Specifications

Current - Collector Cutoff250uA
Transition frequency(fT)2MHz
Collector - Emitter Voltage VCEO140V
Emitter-Base Voltage VEBO5V
DC Current Gain150
Pd - Power Dissipation250W
Number1 PNP
typePNP
Current - Collector(Ic)20A
Operating Temperature-65℃~+200℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor PNP 140V 20A 2MHz 250W Through Hole TO-204

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