onsemi · Transistors (BJTs) · MPN MJ11012G
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| Current - Collector Cutoff | - |
|---|---|
| Transition frequency(fT) | 4MHz |
| Collector - Emitter Voltage VCEO | 60V |
| DC Current Gain | 1000 |
| Pd - Power Dissipation | 200W |
| type | NPN |
| Current - Collector(Ic) | 30A |
| Operating Temperature | -55℃~+200℃@(Tj) |
| Vce Saturation(VCE(sat)) | 4V |
60V 1000 NPN 30A TO-204-2 Single Bipolar Transistors RoHS