onsemi MGSF2N02ELT1G

onsemi · FETs & Power MOSFETs · MPN MGSF2N02ELT1G

No reviews yet — be the first to review onsemi MGSF2N02ELT1G.

Specifications

Gate Charge(Qg)3.5nC@4V
Drain to Source Voltage20V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)2.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)115mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)150pF
TypeN-Channel

Technical details

N-Channel 20V 2.8A 1.25W Surface Mount SOT-23

Related FETs & Power MOSFETs