onsemi · FETs & Power MOSFETs · MPN MCH6661-TL-W
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| Gate Charge(Qg) | 2nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 1.8A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 800mW |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 145mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 88pF |
30V 1.8A 2.6V 800mW 145mΩ@10V 1 N-channel SOT-363-6 Single FETs, MOSFETs RoHS