onsemi · FETs & Power MOSFETs · MPN MCH6601-TL-E
No reviews yet — be the first to review onsemi MCH6601-TL-E.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 1.43nC@10V |
| Output Capacitance(Coss) | 5.7pF |
| Current - Continuous Drain(Id) | 200mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 800mW |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF |
| RDS(on) | 10.4Ω@4V |
| Input Capacitance(Ciss) | 7.5pF |
| Type | P-Channel |
30V 200mA 1.4V 800mW 10.4Ω@4V P-Channel Single FETs, MOSFETs RoHS