onsemi MCH3479-TL-W

onsemi · FETs & Power MOSFETs · MPN MCH3479-TL-W

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Specifications

Gate Charge(Qg)2.8nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation900mW
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)49mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)260pF

Technical details

20V 3.5A 1.3V 900mW 49mΩ@4.5V 1 N-channel SOT-323-3 Single FETs, MOSFETs RoHS

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