onsemi MCH3476-TL-W

onsemi · FETs & Power MOSFETs · MPN MCH3476-TL-W

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Specifications

Gate Charge(Qg)1.8nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)2A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation800mW
RDS(on)310mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)128pF
TypeN-Channel

Technical details

20V 2A 1.3V 800mW 310mΩ@1.8V 1 N-channel N-Channel SC-70FL Single FETs, MOSFETs RoHS

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