onsemi MCH3382-TL-H

onsemi · FETs & Power MOSFETs · MPN MCH3382-TL-H

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)2.3nC@4.5V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)1.04Ω@1.2V
Number1 P-Channel
Input Capacitance(Ciss)170pF
TypeP-Channel

Technical details

12V 2A 900mV 800mW 1.04Ω@1.2V 1 P-Channel P-Channel SC-70FL Single FETs, MOSFETs RoHS

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