onsemi · FETs & Power MOSFETs · MPN MCH3376-TL-E
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| Gate Charge(Qg) | 1.7nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 1.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 800mW |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 241mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 120pF |
| Type | P-Channel |
20V 1.5A 1.4V 800mW 241mΩ@4.5V 1 P-Channel P-Channel MCPH-3 Single FETs, MOSFETs RoHS