onsemi MBT3904DW1T1H

onsemi · Transistors (BJTs) · MPN MBT3904DW1T1H

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Specifications

Current - Collector Cutoff50nA
Pd - Power Dissipation150mW
DC Current Gain100
Collector - Emitter Voltage VCEO40V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))300mV
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

150mW 100 40V NPN 200mA SC-88-6(SC-70-6) Bipolar Transistor Arrays RoHS

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