onsemi KSP10TA

onsemi · Transistors (BJTs) · MPN KSP10TA

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO25V
DC Current Gain60
Pd - Power Dissipation350mW
Operating Temperature-
Current - Collector(Ic)-
Transition frequency(fT)650MHz
Vce Saturation(VCE(sat))500mV
typeNPN

Technical details

25V 60 350mW NPN TO-92-3 Bipolar RF Transistors RoHS

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