onsemi KSD261CYBU

onsemi · Transistors (BJTs) · MPN KSD261CYBU

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO5V
DC Current Gain120
Pd - Power Dissipation500mW
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))400mV
Operating Temperature-

Technical details

20V 120 NPN 500mA TO-92-3 Single Bipolar Transistors RoHS

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