onsemi KSD261CGTA

onsemi · Transistors (BJTs) · MPN KSD261CGTA

No reviews yet — be the first to review onsemi KSD261CGTA.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation500mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))400mV
Operating Temperature-

Technical details

20V 200 1 NPN NPN 500mA TO-92-3 Single Bipolar Transistors RoHS

Related Transistors (BJTs)