onsemi KSC3503DS

onsemi · Transistors (BJTs) · MPN KSC3503DS

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO5V
DC Current Gain60
Pd - Power Dissipation7W
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor NPN 300V 100mA 150MHz 7W Through Hole TO-126-3

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