onsemi · Transistors (BJTs) · MPN KSC2383YTA
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| Current - Collector Cutoff | 1uA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 160V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 60 |
| Pd - Power Dissipation | 900mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.5V |
Bipolar (BJT) Transistor NPN 160V 1A 100MHz 900mW Through Hole TO-92-3L