onsemi · Transistors (BJTs) · MPN KSC1008YTA
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 50MHz |
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 8V |
| DC Current Gain | 40 |
| Pd - Power Dissipation | 800mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 700mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 200mV |
Bipolar (BJT) Transistor NPN 60V 700mA 50MHz 800mW Through Hole TO-92-3L