onsemi KSC1008CYTA

onsemi · Transistors (BJTs) · MPN KSC1008CYTA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain40
Pd - Power Dissipation800mW
typeNPN
Current - Collector(Ic)700mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 60V 700mA 50MHz 800mW Through Hole TO-92

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