onsemi KSA916YTA

onsemi · Transistors (BJTs) · MPN KSA916YTA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO5V
DC Current Gain60
Pd - Power Dissipation3W
Number1 PNP
typePNP
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 3W Through Hole TO-92-3

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