onsemi KSA1013YTA

onsemi · Transistors (BJTs) · MPN KSA1013YTA

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain160
Pd - Power Dissipation900mW
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-
Vce Saturation(VCE(sat))1.5V

Technical details

Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW Through Hole TO-92-3L

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